Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

被引：24

作者：

Bohuslavskyi, H. ^{[1
,2
,3
]}

Kotekar-Patil, D. ^{[1
,3
]}

Maurand, R. ^{[1
,3
]}

Corna, A. ^{[1
,3
]}

Barraud, S. ^{[1
,2
]}

Bourdet, L. ^{[1
,4
]}

Hutin, L. ^{[1
,2
]}

Niquet, Y. -M. ^{[1
,4
]}

Jehl, X. ^{[1
,3
]}

De Franceschi, S. ^{[1
,3
]}

Vinet, M. ^{[1
,2
]}

Sanquer, M. ^{[1
,3
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA, LETI MINATEC Campus, F-38000 Grenoble, France

[3] CEA, INAC PHELIQS, F-38000 Grenoble, France

[4] CEA, INAC MEM, F-38000 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 19期

关键词：

SILICON NANOWIRE MOSFET; ELECTRICAL CONTROL; QUBIT; FIELD;

D O I：

10.1063/1.4966946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few hole regime that is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate approximate to 120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit. Published by AIP Publishing.

引用

页数：4

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