A Compact Watt-level GaN-on-Si Class AB Power Amplifier for Handset Applications

被引：0

作者：

Hasin, Muhammad Ruhul ^{[1
]}

Kitchen, Jennifer ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA

来源：

PROCEEDINGS OF THE 2017 TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS (WMCS) | 2017年

关键词：

Class AB; GaN; HEMT; Power Amplifier; Linearity; EFFICIENCY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of -35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600-950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.

引用

页数：4

共 11 条

[1]

[Anonymous], 2008, AN011 NITR CORP

[2]

[Anonymous], 2006, RF power amplifiers for wireless communications

[3] A Review of Watt-Level CMOS RF Power Amplifiers [J].