Metamorphic high electron mobility Te-doped AllnSb/GalnSb heterostructures on InP (001)

被引：9

作者：

Delhaye, G. ^{[1
]}

Desplanque, L. ^{[1
]}

Wallart, X. ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 06期

关键词：

D O I：

10.1063/1.2978365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work reports on the Te delta-doping of high electron mobility AlInSb/GaInSb heterostructures grown by molecular beam epitaxy on InP(001) substrates with a metamorphic approach. The combination of atomic force microscopy and van der Pauw measurements is used to investigate and explain the influence of the buffer layers on the electron mobility and sheet density in the heterostructure. Furthermore, a significant increase in the electron sheet density is reached when the delta-doping plane is incorporated in a thin AlSb layer introduced in the barrier. This improvement is explained by the lower dopant activation energy in the AlSb layer. AlInSb/GaInSb heterostructures with an electron mobility of 18 000 cm(2)/V s and sheet density of 2.2 X 10(12) cm(-2) at room temperature are demonstrated. (C) 2008 American Institute of Physics.

引用

页数：3

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