A Miniaturized Millimeter-Wave Standing-Wave Filtering Switch With High P1dB

被引:41
作者
Ma, Kaixue [1 ]
Mou, Shouxian [1 ]
Yeo, Kiat Seng [1 ]
机构
[1] Nanyang Technol Univ, Elect & Elect Engn Sch, Singapore 639876, Singapore
关键词
BiCMOS; electrostatic discharge (ESD) protection; front-end; millimeter-wave circuits; RF integrated circuit (RFIC); single-pole double-throw (SPDT); single-pole single-throw (SPST); 60-GHz radio; switchable artificial resonator; transmit/receive (T/R) switch; CMOS T/R SWITCH; ULTRA-WIDE-BAND; ESD PROTECTION; 0.13-MU-M CMOS; SPDT SWITCH; NM CMOS; 77; GHZ; DESIGN; TECHNOLOGY; 2.4-GHZ;
D O I
10.1109/TMTT.2013.2250994
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design considerations of a silicon-based transmit/receive (T/R) switch for microwave and millimeter-wave frequencies. Techniques for minimizing switch size and loss while increasing linearity are discussed. With the dedicated idea of the standing-wave concept, a combo design of a bandpass filter and switch, called the filtering switch, is introduced for the front-end system to achieve better performance in terms of low insertion loss, compact size, and good linearity simultaneously. Based on the proposed switchable artificial resonator, a standing-wave single-pole single-throw (SPST) and a single-pole double-throw (SPDT) filtering switches are designed and implemented for demonstration. Fabricated with a 0.18-mu m SiGe BiCMOS process, the standing-wave SPST exhibits only 1.9-dB insertion loss and 18-dB isolation with a compact chip area of only 0.027 mm(2) at 50 GHz. The SPDT T/R switch exhibits 3.2-dB insertion loss, good stopband rejection, and 20-dB isolation with only 0.0675 mm(2) active chip area at 60 GHz. With the proposed standing-wave topology, a good linearity with the input 1-dB compression point (P1dB) of 21 dBm is obtained for both switches.
引用
收藏
页码:1505 / 1515
页数:11
相关论文
共 27 条
[1]  
ADABI E, 2009, 39 EUR MICR C, P389
[2]   A Low Power 77 GHz Low Noise Amplifier With an Area Efficient RF-ESD Protection in 65 nm CMOS [J].
Berenguer, Roc ;
Liu, Gui ;
Xu, Yang .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (12) :678-680
[3]   A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process [J].
Chang, Hong-Yeh ;
Chan, Ching-Yan .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (02) :82-84
[4]   A 50 to 94-GHz CMOS SPDT switch using traveling-wave concept [J].
Chao, Shih-Fong ;
Wang, Huei ;
Su, Chia-Yi ;
Chern, John G. J. .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (02) :130-132
[5]   Design of wide-tuning-range millimeter-wave CMOS VCO with a standing-wave architecture [J].
Chien, Jun-Chau ;
Lu, Liang-Hung .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (09) :1942-1952
[6]   Integrated bandpass filter at 77 GHz in SiGe technology [J].
Dehlink, Bernhard ;
Engl, Mario ;
Aufinger, Klaus ;
Knapp, Herbert .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (05) :346-348
[7]   High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters [J].
Franc, Anne-Laure ;
Pistono, Emmanuel ;
Gloria, Daniel ;
Ferrari, Philippe .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (05) :1219-1226
[8]  
Hong JS., 2001, MICROSTRIP FILTERS R, DOI [10.1002/0471221619, DOI 10.1002/0471221619]
[9]   A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology [J].
Hsu, Cheng-Ying ;
Chen, Chu-Yu ;
Chuang, Huey-Ru .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (03) :246-248
[10]   Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHZ applications on p- silicon substrates [J].
Huang, FJ ;
O, KK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (01) :35-41