Mechanical characterization of chemical-vapor-deposited polycrystalline 3C silicon carbide thin films

被引：19
|
作者：
Nagappa, Sharvani [1 ]
Zupan, Marc [1 ]
Zorman, C. A. [2 ]
机构：
[1] Univ Maryland Baltimore Cty, Dept Mech Engn, Baltimore, MD 21250 USA
[2] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
来源：
SCRIPTA MATERIALIA | 2008年 / 59卷 / 09期
关键词：
Silicon carbide; Chemical vapor deposition; Nanoindentation thin films;
D O I：
10.1016/j.scriptamat.2008.07.010
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A promising material for microelectromechanical system devices is silicon carbide (SiC) because of its excellent thermal, mechanical and chemical properties. In this study, nanoindentation was first used to evaluate the elastic properties and homogeneity of a polycrystalline 3C-SiC film. Subsequently, free-standing film curvature measurements were used to evaluate the residual stresses in the film. The Young's modulus was found to be 373 +/- 39 GPa and the residual stress was 26.9 +/- 1.7 MPa. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：995 / 998
页数：4
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