Strain redistribution at the phase transition of MnAs/GaAs(001) films

被引：14
|
作者：
Adriano, C
Giles, C
Couto, ODD
Brasil, MJSP
Iikawa, F
Däweritz, L
机构：
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1063/1.2194407
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the thermal evolution of the lattice parameters of a MnAs film epitaxially grown on GaAs(001) around its magnetostructural first-order phase transition using x-ray diffraction. Despite the substrate constraint, large variation of one of the in-plane lattice parameters is preserved, typical of bulk MnAs phase transition, during a large temperature range where two phases coexist. We demonstrated that the condition of the constant film length along this direction, in accord to the substrate length, is always fulfilled during the process. The effect is attributed to the gliding of misfit dislocations present on the film.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Effect of strain on the local phase transition temperature of MnAs/GaAs(001)
    Mohanty, J
    Hesjedal, T
    Ney, A
    Takagaki, Y
    Koch, R
    Däweritz, L
    Ploog, KH
    APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2829 - 2831
  • [2] Phase-transition-induced residual strain in ferromagnetic MnAs films epitaxially grown on GaAs(001)
    Trampert, A
    Schippan, F
    Däweritz, L
    Ploog, KH
    APPLIED PHYSICS LETTERS, 2001, 78 (17) : 2461 - 2463
  • [3] Monitoring the α- to β-phase transition in MnAs/GaAs(001) thin films as function of temperature
    Gallas, B.
    Rivory, J.
    Arwin, H.
    Vidal, F.
    Stchakovsky, M.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (04): : 863 - 866
  • [4] α-β Phase transition in MnAs/GaAs(001) thin films:: An optical spectroscopic investigation
    Vidal, F.
    Pluchery, O.
    Witkowski, N.
    Garcia, V.
    Marangolo, M.
    Etgens, V. H.
    Borensztein, Y.
    PHYSICAL REVIEW B, 2006, 74 (11)
  • [5] Changes in optical properties of MnAs thin films on GaAs(001) induced by α- to β-phase transition
    Gallas, B.
    Rivory, J.
    Arwin, H.
    Vidal, F.
    Etgens, V. H.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (04): : 859 - 862
  • [6] First-order phase transition in MnAs disks on GaAs (001)
    Takagaki, Y
    Jenichen, B
    Herrmann, C
    Wiebicke, E
    Däweritz, L
    Ploog, KH
    PHYSICAL REVIEW B, 2006, 73 (12)
  • [7] Cracking of epitaxial MnAs films on GaAs(001)
    Takagaki, Y.
    Moreno, M.
    Schuetzenduebe, P.
    Ramsteiner, M.
    Herrmann, C.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [8] Selective etching of epitaxial MnAs films on GaAs(001): Influence of structure and strain
    Mohanty, J., 1600, American Institute of Physics Inc. (98):
  • [9] Effect of MnAs/GaAs(001) film accommodations on the phase-transition temperature
    Iikawa, F
    Brasil, MJSP
    Couto, ODD
    Adriano, C
    Giles, C
    Däweritz, L
    APPLIED PHYSICS LETTERS, 2004, 85 (12) : 2250 - 2252
  • [10] In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)
    Gatel, C.
    Fu, X.
    Serin, V.
    Eddrief, M.
    Etgens, V.
    Warot-Fonrose, B.
    NANO LETTERS, 2017, 17 (04) : 2460 - 2466
12345