Origin of New Broad Raman D and G Peaks in Annealed Graphene

被引：181

作者：

Hong, Jinpyo ^{[1
]}

Park, Min Kyu ^{[1
]}

Lee, Eun Jung ^{[1
]}

Lee, DaeEung ^{[1
]}

Hwang, Dong Seok ^{[1
]}

Ryu, Sunmin ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea

来源：

SCIENTIFIC REPORTS | 2013年 / 3卷

基金：

新加坡国家研究基金会;

关键词：

HYDROGENATION; GRAPHITE; FILMS;

D O I：

10.1038/srep02700

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks observed in annealed graphene and elucidate their chemical origins by Raman spectroscopy and atomic force microscopy (AFM). Graphene annealed in oxygen-free atmosphere revealed very broad additional Raman peaks overlapping the D, G and 2D peaks of graphene itself. Based on the topographic confirmation by AFM, the new Raman peaks were attributed to amorphous carbon formed on the surface of graphene by carbonization of environmental hydrocarbons. While the carbonaceous layers were formed for a wide range of annealing temperature and time, they could be effectively removed by prolonged annealing in vacuum. This study underlines that spectral features of graphene and presumably other 2-dimensional materials are highly vulnerable to interference by foreign materials of molecular thickness.

引用

页数：20

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