Radiation tolerance of two-dimensional material-based devices for space applications

被引：111

作者：

Vogl, Tobias ^{[1
]}

Sripathy, Kabilan ^{[1
]}

Sharma, Ankur ^{[2
]}

Reddy, Prithvi ^{[3
]}

Sullivan, James ^{[4
]}

Machacek, Joshua R. ^{[4
]}

Zhang, Linglong ^{[2
]}

Karouta, Fouad ^{[5
]}

Buchler, Ben C. ^{[1
]}

Doherty, Marcus W. ^{[3
]}

Lu, Yuerui ^{[1
]}

Lam, Ping Koy ^{[1
]}

机构：

[1] Australian Natl Univ, Ctr Quantum Computat & Commun Technol, Dept Quantum Sci, Res Sch Phys & Engn, Acton, ACT 2601, Australia

[2] Australian Natl Univ, Res Sch Engn, Acton, ACT 2601, Australia

[3] Australian Natl Univ, Laser Phys Ctr, Res Sch Phys & Engn, Acton, ACT 2601, Australia

[4] Australian Natl Univ, Plasma Res Lab, Res Sch Phys & Engn, Canberra, ACT 2601, Australia

[5] Australian Natl Univ, Australian Natl Fabricat Facil, Res Sch Phys & Engn, Acton, ACT 2601, Australia

来源：

NATURE COMMUNICATIONS | 2019年 / 10卷 / 1期

基金：

澳大利亚研究理事会;

关键词：

HEXAGONAL BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; QUANTUM EMITTERS; DEFECT FORMATION; X-RAY; MOS2; IRRADIATION; PHOTOLUMINESCENCE; EMISSION; PROTON;

D O I：

10.1038/s41467-019-09219-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and light sources for long-distance quantum communication. Here we present a comprehensive study on combined radiation effects in Earth's atmosphere on various devices based on these nanomaterials. Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to gamma-rays, protons and electrons. The devices show negligible change in performance after the irradiation, suggesting robust suitability for space use. Under excessive gamma-radiation, however, monolayer WS2 shows decreased defect densities, identified by an increase in photoluminescence, carrier lifetime and a change in doping ratio proportional to the photon flux. The underlying mechanism is traced back to radiation-induced defect healing, wherein dissociated oxygen passivates sulfur vacancies.

引用

页数：10