Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

被引：13
作者：
Dumka, DC
Hoke, WE
Lemonias, PJ
Cueva, G
Adesida, I
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA
[2] Raytheon RF Components, Andover, MA 01810 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 21期
关键词：
D O I：
10.1049/el:19991267
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520cm(2)/Vs and a sheet density of 2.85 x 10(12)cm(-2) are achieved at room temperature. Devices with gate lengths ranging from 0.18 to 1.0 mu m have been fabricated. Large drain currents and extrinsic transconductances with values up to 900mA/mm and 1.1mS/mm, respectively, are reported. For a 0.18 mu m gate length device, a unity current gain cutoff frequency (f(T)) of 204GHz is obtained. To the authors' knowledge, this is the highest f(T) to date for a metamorphic HEMT on GaAs.
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页码：1854 / 1856
页数：3
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