Integrated device and circuit simulation of "dual carrier field effect transistor" and "three dimensional field effect transistor" with effective channel length of 5-20nm and their ASIC and SOC.

被引：0
作者：
Huang, C [1 ]
Yang, YH [1 ]
Huang, DH [1 ]
机构：
[1] China Aerosp Corp, Beijing, Peoples R China
来源：
2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：1043 / 1046
页数：4
相关论文
共 14 条
[1]   Microwave performance of SOI lateral dual carrier field effect transistors and integrated circuits (SOI LDCFET and SOI DCFEIC). [J].
Huang, C ;
Yang, YH ;
Huang, DH ;
Wu, CL ;
Li, YB ;
Xu, YZ .
2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2000, :28-31
[2]   Microwave performance of vertical dual carrier field effect transistors and integrated circuits. [J].
Huang, C ;
Yang, YH ;
Xu, P ;
Huang, DH ;
Sun, YM ;
Lu, Q .
2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2000, :13-16
[3]  
Huang C, 2000, 2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, P1, DOI 10.1109/ICMMT.2000.895603
[4]  
HUANG C, 2004, Patent No. 001357263
[5]  
HUANG C, P 6 ICSICT OCT 2001, P517
[6]  
HUANG C, 2004, P 7 ICSICT OCT 2004, P517
[7]  
HUANG C, P 4 ASICON OCT 2001, P876
[8]  
LI GH, P 6 ICIST OCT 2001 S, P551
[9]  
LI GH, P 5 ASICON OCT 2003, P1337
[10]  
TANG ZM, P 5 ASICON OCT 2003, P1373
12