H atom surface loss kinetics in pulsed inductively coupled plasmas

被引:4
|
作者
Jacq, S. [1 ]
Cardinaud, C. [1 ]
Le Brizoual, L. [1 ]
Granier, A. [1 ]
机构
[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, UMR6502, F-44322 Nantes 3, France
来源
PLASMA SOURCES SCIENCE & TECHNOLOGY | 2013年 / 22卷 / 05期
关键词
INDUCED FLUORESCENCE; RECOMBINATION; DENSITY; PROBE; GAS;
D O I
10.1088/0963-0252/22/5/055004
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Pulsed plasmas are very powerful tools to investigate mechanisms. This paper is focused on H atom kinetics in low-pressure high-density inductively coupled pulsed plasmas. We explore pure H-2, H-2/N-2, CH4/H-2 and CH4/N-2 mixtures. These gas mixtures offer two very different kinds of wall conditions, which are stainless-steel and hydrocarbon-coated walls. It shows that H loss probability (beta) is sensitive to wall conditions. Efforts are made to understand beta evolutions with the different parameters. The effect of pressure in non-depositing plasmas is also investigated. Evolution of H atom surface loss probability is linked to ion flux measurements. Ion bombardment promotes H surface loss.
引用
收藏
页数:9
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