Substrate versus superstrate configuration for stable thin film silicon solar cells

被引:25
作者
Kim, Ka-Hyun [1 ,2 ]
Kasouit, Samir [2 ]
Johnson, Erik V. [3 ]
Roca i Cabarrocas, Pere [3 ]
机构
[1] UNIST Adv Ctr Energy, KIER, Ulsan, South Korea
[2] TOTAL SA, Gas & Power R&D Div, Courbevoie, France
[3] Ecole Polytech, CNRS, UMR7647, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France
关键词
Hydrogen; Defect formation; Light-induced degradation; Amorphous silicon; Nanocrystalline; PECVD; HYDROGENATED AMORPHOUS-SILICON; ELEVATED-TEMPERATURES; DEGRADATION; DEPOSITION; DIFFUSION; SI;
D O I
10.1016/j.solmat.2013.05.045
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We report on the light-induced degradation kinetics of hydrogenated polymorphous silicon (pm-Si:H) solar cells having either substrate or superstrate device configuration. Both types of devices were exposed to light-soaking for 500 h. While pm-Si:H superstrate solar cells showed strong degradation (up to 60%) under mercury vapor lamp illumination, we have found that substrate structures are remarkably stable. The difference between the two types of devices is shown to be related to interface delamination which only occurs in superstrate devices. We further demonstrate a strong correlation between short-circuit current density decrease upon light-soaking and solar cell area loss. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:124 / 128
页数:5
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