Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

被引：13

作者：

Efthymiou, E. ^{[1
]}

Bernardini, S. ^{[1
]}

Zhang, J. F. ^{[2
]}

Volkos, S. N. ^{[1
,3
]}

Hamilton, B. ^{[1
]}

Peaker, A. R. ^{[1
]}

机构：

[1] Univ Manchester, Ctr Elect Mat Devices & Narrostruct, Manchester M60 1QD, Lancs, England

[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[3] CNR INFM MDM Natl Lab, I-20041 Milan, Italy

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

SiO2/HfO2 gate stacks; RF remote plasma; Hydrogen; Deuterium; Dielectric breakdown;

D O I：

10.1016/j.tsf.2008.08.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：207 / 208

页数：2

共 47 条

[31] A new approach to analyze the degradation and breakdown of thin SiO2 films under static and dynamic electrical stress [J].

Rodríguez, R ;

Nafria, M ;

Miranda, E ;

Suñé, J ;

Aymerich, X .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (07) :317-319

[32] a-InGaZnO Thin-Film Transistors With Novel Atomic Layer-Deposited HfO2 Gate Insulator Using Two Types of Reactant Gases [J].

Lee, Kang-Min ;

Ju, Byeong-Kwon ;

Choi, Sung-Hwan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (01) :127-134

[33] Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high-k stacks as evidenced by atom probe tomography [J].

Tu, Y. ;

Han, B. ;

Shimizu, Y. ;

Kunimune, Y. ;

Shimada, Y. ;

Katayama, T. ;

Ide, T. ;

Inoue, M. ;

Yano, F. ;

Inoue, K. ;

Nagai, Y. .

APPLIED PHYSICS LETTERS, 2018, 112 (03)

[34] Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1-yBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si Gate Stacks [J].

Takahashi, Mitsue ;

Sakai, Shigeki .

FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION, 2020, 131 :23-60

[35] Nanometer-scale analysis of current limited stresses impact on SiO2 gate oxide reliability using C-AFM [J].

Porti, M ;

Nafría, M ;

Aymerich, X .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2004, 3 (01) :55-60

[36] Nanometer-scale analysis of current limited stresses impact on SiO2 gate oxide reliability using C-AFM [J].

Porti, M ;

Nafría, A ;

Aymerich, X .

NANOTECHNOLOGY, 2003, 5118 :466-473

[37] Effects of High Pressure Hydrogen Anneal Process on Performance and Reliability in HfP2/SiO2 Dielectric with Contact Etch Stop Layer Stressor [J].

Song, Seung Hyun ;

Park, Min Sang ;

Lee, Kyong Taek ;

Choi, Hyun Sik ;

Choi, Gil Bok ;

Baek, Rock Hyun ;

Sagong, Hyun Chul ;

Jung, Sung Woo ;

Kang, Chang Yong ;

Wu, Bob ;

Jeong, Yoon-Ha .

2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 2009, :225-+

[38] Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure [J].

Rodríguez, R ;

Nafría, M ;

Miranda, E ;

Suñé, J ;

Aymerich, X .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) :2138-2145

[39] Defect Density Reduction of Thin SiO2 MOSFET through Oxidation Pre-cleaning improvement - a Fast Wafer Level Reliability Monitoring [J].

Kamaruddin, M. H. ;

Soin, N. ;

Veriven, C. ;

How, C. M. ;

Ang, C. K. .

2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2019,

[40] Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering [J].

Wang, Fang-Hsing ;

Chang, Hung-Peng ;

Tseng, Chih-Chung ;

Huang, Chia-Cheng .

SURFACE & COATINGS TECHNOLOGY, 2011, 205 (23-24) :5269-5277

← 1 2 3 4 5 →