Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

被引：13

作者：

Efthymiou, E. ^{[1
]}

Bernardini, S. ^{[1
]}

Zhang, J. F. ^{[2
]}

Volkos, S. N. ^{[1
,3
]}

Hamilton, B. ^{[1
]}

Peaker, A. R. ^{[1
]}

机构：

[1] Univ Manchester, Ctr Elect Mat Devices & Narrostruct, Manchester M60 1QD, Lancs, England

[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[3] CNR INFM MDM Natl Lab, I-20041 Milan, Italy

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

SiO2/HfO2 gate stacks; RF remote plasma; Hydrogen; Deuterium; Dielectric breakdown;

D O I：

10.1016/j.tsf.2008.08.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：207 / 208

页数：2

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