Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

被引：13
作者：
Efthymiou, E. [1 ]
Bernardini, S. [1 ]
Zhang, J. F. [2 ]
Volkos, S. N. [1 ,3 ]
Hamilton, B. [1 ]
Peaker, A. R. [1 ]
机构：
[1] Univ Manchester, Ctr Elect Mat Devices & Narrostruct, Manchester M60 1QD, Lancs, England
[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England
[3] CNR INFM MDM Natl Lab, I-20041 Milan, Italy
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 01期
关键词：
SiO2/HfO2 gate stacks; RF remote plasma; Hydrogen; Deuterium; Dielectric breakdown;
D O I：
10.1016/j.tsf.2008.08.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：207 / 208
页数：2
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