Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

被引：13

作者：

Efthymiou, E. ^{[1
]}

Bernardini, S. ^{[1
]}

Zhang, J. F. ^{[2
]}

Volkos, S. N. ^{[1
,3
]}

Hamilton, B. ^{[1
]}

Peaker, A. R. ^{[1
]}

机构：

[1] Univ Manchester, Ctr Elect Mat Devices & Narrostruct, Manchester M60 1QD, Lancs, England

[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[3] CNR INFM MDM Natl Lab, I-20041 Milan, Italy

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

SiO2/HfO2 gate stacks; RF remote plasma; Hydrogen; Deuterium; Dielectric breakdown;

D O I：

10.1016/j.tsf.2008.08.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：207 / 208

页数：2

共 47 条

[1] Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM [J].

Aguilera, L ;

Porti, M ;

Nafría, M ;

Aymerich, X .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) :157-159

[2] Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques [J].

Aguilera, L. ;

Amat, E. ;

Rodriguez, R. ;

Porti, M. ;

Nafria, M. ;

Aymerich, X. .

MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) :1618-1621

[3] Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs [J].

Kil, Tae-Hyun ;

Yeon, Ju-Won ;

Park, Hyo-Jun ;

Lee, Moon-Kwon ;

Yun, Eui-Cheol ;

Kim, Min-Woo ;

Kang, Sang-Min ;

Park, Jun-Young .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2024, 12 :1030-1033

[4] Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks [J].

Efthymiou, E. ;

Bernardini, S. ;

Volkos, S. N. ;

Hamilton, B. ;

Zhang, J. F. ;

Uppal, H. J. ;

Peaker, A. R. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2290-2293

[5] Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM [J].

Blasco, X ;

Nafría, M ;

Aymerich, X ;

Pétry, J ;

Vandervorst, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) :2817-2819

[6] Analysis of Statistical Variation in NBTI Degradation of HfO2/SiO2 FETs [J].

Yoshimoto, H. ;

Hisamoto, D. ;

Shimamoto, Y. ;

Tsuchiya, R. ;

Yanagi, I. ;

Arigane, T. ;

Torii, K. ;

Funayama, K. ;

Hashimoto, T. ;

Makiyama, H. ;

Horita, K. ;

Iwamatsu, T. ;

Shiga, K. ;

Mizutani, M. ;

Inoue, M. ;

Kaneoka, T. .

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, :1001-1003

[7] Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films [J].

Gao, D. Z. ;

Strand, J. ;

El-Sayed, A. -M. ;

Shluger, A. L. ;

Padovani, A. ;

Larcher, L. .

2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,

[8] Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics [J].

Choi, R ;

Onishi, K ;

Kang, CS ;

Cho, HJ ;

Kim, YH ;

Krishnan, S ;

Akbar, MS ;

Lee, JC .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (03) :144-146

[9] Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics [J].

Shubhakar, Kalya ;

Pey, Kin Leong ;

Raghavan, Nagarajan ;

Kushvaha, Sunil Singh ;

Bosman, Michel ;

Wang, Zhongrui ;

O'Shea, Sean Joseph .

MICROELECTRONIC ENGINEERING, 2013, 109 :364-369

[10] Impact of Trap Creation at SiO2/Poly-Si Interface on Ultra-thin SiO2 Reliability [J].

Mitani, Y. ;

Suzuki, M. ;

Higashi, Y. ;

Takaishi, R. .

2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,

← 1 2 3 4 5 →