Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

被引：13
|
作者：
Efthymiou, E. [1 ]
Bernardini, S. [1 ]
Zhang, J. F. [2 ]
Volkos, S. N. [1 ,3 ]
Hamilton, B. [1 ]
Peaker, A. R. [1 ]
机构：
[1] Univ Manchester, Ctr Elect Mat Devices & Narrostruct, Manchester M60 1QD, Lancs, England
[2] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England
[3] CNR INFM MDM Natl Lab, I-20041 Milan, Italy
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 01期
关键词：
SiO2/HfO2 gate stacks; RF remote plasma; Hydrogen; Deuterium; Dielectric breakdown;
D O I：
10.1016/j.tsf.2008.08.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Current-voltage measurements indicated that RF hydrogen/deuterium remote plasma treatment of thin p-Si/SiO2/HfO2 structures proved to be detrimental in terms of dielectric reliability. By using capacitance-voltage measurements we demonstrate that this reported degradation was not attributed to plasma-induced defects but rather due to an enhanced liberation of hydrogen and deuterium species during the electrical stress. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：207 / 208
页数：2
相关论文
共 50 条
  • [1] Reliability analysis of thin HfO2/SiO2 gate dielectric stack
    Samanta, Piyas
    Zhu, Chunxiang
    Chan, Mansun
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 142 - +
  • [2] Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks
    Xu, Z
    Houssa, M
    Carter, R
    Naili, M
    De Gendt, S
    Heyns, M
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 10127 - 10129
  • [3] Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2/SiO2 gate stacks
    Barraud, S.
    Thevenod, L.
    Casse, M.
    Bonno, O.
    Mouis, M.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2404 - 2407
  • [4] Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM
    Aguilera, L
    Porti, M
    Nafría, M
    Aymerich, X
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) : 157 - 159
  • [5] Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques
    Aguilera, L.
    Amat, E.
    Rodriguez, R.
    Porti, M.
    Nafria, M.
    Aymerich, X.
    MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1618 - 1621
  • [6] Spatial distributions of trapping centers in HfO2/SiO2 gate stacks
    Heh, D
    Young, CD
    Brown, GA
    Hung, PY
    Diebold, A
    Bersuker, G
    Vogel, EM
    Bernstein, JB
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [7] Comparison of plasma-induced damage in SiO2/TiN and HfO2/TiN gate stacks
    Young, C. D.
    Bersuker, G.
    Zhu, F.
    Matthews, K.
    Choi, R.
    Song, S. C.
    Park, H. K.
    Lee, J. C.
    Lee, B. H.
    2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 67 - +
  • [8] Comparison Of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale with CAFM
    Blasco, X
    Nafría, M
    Aymerich, X
    Vandervorst, W
    ELECTRONICS LETTERS, 2005, 41 (12) : 719 - 721
  • [9] Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks
    Li, Xiuyan
    Yajima, Takeaki
    Nishimura, Tomonori
    Toriumi, Akira
    APPLIED PHYSICS EXPRESS, 2015, 8 (06)
  • [10] Impact of gate materials on positive charge formation in HfO2/SiO2 stacks
    Zhao, C. Z.
    Zhang, J. F.
    Zahid, M. B.
    Groeseneken, G.
    Degraeve, R.
    De Gendt, S.
    APPLIED PHYSICS LETTERS, 2006, 89 (02)
12345