Evaluation of freestanding GaN as an alpha and neutron detector

被引：42

作者：

Mulligan, Padhraic ^{[1
]}

Wang, Jinghui ^{[1
]}

Cao, Lei ^{[1
]}

机构：

[1] Ohio State Univ, Nucl Engn Program, Columbus, OH 43210 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 719卷

关键词：

Gallium nitride; Neutron detection; Charged particle detection;

D O I：

10.1016/j.nima.2013.04.019

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The wide bandgap (3.39) eV and large dislocation energy of the III-V semiconductor gallium nitride (GaN) make this a desirable material for charged particle spectroscopy in high temperature, high radiation environments. While other research groups have established that charged particle detectors can be fabricated from high quality, thin films of molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) grown GaN, this work demonstrates the feasibility of ionizing radiation detectors created from significantly thicker freestanding n-type GaN, grown via hydride vapor phase epitaxy (HVPE). Detectors were fabricated by depositing Ni/Au pads on n-type GaN, forming a Schottky barrier diode. Capacitance voltage measurements on the detectors showed an intrinsic carrier concentration in the range of 10(-16) cm(-3)-10(-15)cm(-3), and indicated an inhomogeneous distribution between diodes on the same wafer. The radiation sensitivity of the fabricated detectors was analyzed using alpha particles from an Am-241 source. Charge collection efficiency (CCE) calculations from these experiments indicate an efficiency of 100 percent The detectors were also successfully used to detect neutron induced charged particles using a Li2O foil in a neutron beam. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：13 / 16

页数：4

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