First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga,Mn)As

被引：107
|
作者：
Ogawa, T [1 ]
Shirai, M [1 ]
Suzuki, N [1 ]
Kitagawa, I [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 196卷
关键词：
diluted magnetic semiconductor; electronic band structure; ferromagnetism;
D O I：
10.1016/S0304-8853(98)00794-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
First-principles LMTO-ASA band calculations are performed for ferromagnetic Ga1-xMnxAs (x = 1, 1/4, 1/8) by assuming supercell structures. The magnetic moment per formula is about 4 mu(B), and the magnetic moment of As is antiparallel to the Mn moment, i.e. valence-band carriers with As 4p character interact antiferromagnetically with Mn spins. Further the band structures show half-metallic behavior and the results for x = 1/8 indicate that the antiparallel polarization of As site is confned rather in the vicinity of Mn site. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：428 / 429
页数：2
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