Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

被引：6

作者：

Mafinejad, Yasser ^{[1
]}

Zarghami, Majid ^{[2
,3
]}

Kouzani, Abbas Z. ^{[1
]}

Mafinezhad, Khalil ^{[2
,3
]}

机构：

[1] Deakin Univ, Sch Engn, Waurn Ponds, Vic 3216, Australia

[2] Sadjad Inst Higher Educ, Sch Elect & Comp Engn, MEMS, Razavi Khorasan, Mashhad, Iran

[3] Sadjad Inst Higher Educ, Sch Elect & Comp Engn, RF MEMS Res Grp, Razavi Khorasan, Mashhad, Iran

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 24期

关键词：

meander type beam; LC resonant frequency; discontinuity CPW; isolation; insertion loss; ACTUATION-VOLTAGE;

D O I：

10.1587/elex.10.20130746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S-21 and S-11 are less than -10 dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1 V and 0.3 V, respectively.

引用

页数：8

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