Fabrication of β-Ga2O3/Si Solar-Blind UV Photodiode via Sol-Gel Method

被引：0
作者：
Koksal, Nur Efsan [1 ]
Atilgan, Abdullah [2 ]
Harmanci, Ugur [3 ]
Yildiz, Abdullah [2 ]
机构：
[1] Ankara Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Elect & Elect Engn, Ankara, Turkey
[2] Ankara Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Energy Syst Engn, Ankara, Turkey
[3] Harran Univ, Fac Engn, Dept Elect & Elect Engn, Sanliurfa, Turkey
来源：
2019 11TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING (ELECO 2019) | 2019年
关键词：
THIN-FILMS; PHOTODETECTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new SnO2/Ga2O3/Si heterostructure has been designed and fabricated via sol-gel spin coating method. The electrical property of SnO2/Ga2O3/Si heterostructure is investigated in the dark and under UV illumination with a wavelength of 254 nm by means of the current-voltage (I-V) measurements. It is clearly seen that the photodiode is sensitive to UV light and it also has to rectify behavior. The fabricated solar-blind UV photodiode is a promising candidate to detect UV light. The temporal response to UV light obviously shows that the good reproducibility of the photodiode.
引用
收藏
页码：406 / 408
页数：3
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