Thermoluminescence of chemical vapor deposited diamond film

被引:1
|
作者
Kim, T [1 ]
机构
[1] Chonju Natl Univ Educ, Dept Sci Educ, Chonju 560757, South Korea
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2001年 / 156卷 / 1-4期
关键词
chemical vapor deposited diamond film; thermoluminescence; defect;
D O I
10.1080/10420150108216895
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Diamond films were synthesized by a chemical vapor deposition (CVD). Raman spectrum showed the diamond line at 1332 cm(-1) and X-ray diffraction pattern exhibited a strong (111) peak of diamond. The scanning electron microscopy analysis showed that the CVD diamond film was grown to be unepitaxial crystallites with pyramidal hillocks. Three-dimensional thermoluminescence spectrum of CVD diamond film irradiated with X-ray produced one peak at 560 K and 430 nm. The main 560 K glow curve was caused by first order kinetics. Activation energy, and escape frequency of the main peak were calculated to be 0.92similar to1.05 eV and 3.4 x 10(7) s(-1) respectively. The emission spectrum at 560 K was split into 1.63 eV, 2.60 eV, and 3.07 eV emission bands that were found to be associated with silicon-vacancy center, H3, and A center, respectively.
引用
收藏
页码:209 / 214
页数:6
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