Semiconductor optical parametric generators in isotropic semiconductor diode lasers

被引:30
作者
Bijlani, Bhavin J. [1 ]
Abolghasem, Payam [1 ]
Helmy, Amr S. [1 ]
机构
[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
DIFFERENCE-FREQUENCY-GENERATION; WAVE-GUIDES; 2ND-HARMONIC GENERATION; CARRIER LIFETIME; REFRACTIVE-INDEX; ENTANGLEMENT; INGAASP; GAAS;
D O I
10.1063/1.4819736
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the characteristics of an intracavity semiconductor optical parametric generator in multiple-quantum well AlGaAs/InGaAs Bragg reflection waveguide lasers emitting between 986 and 995 nm. The cavity of the laser is phase-matched for down-conversion of pump photons to a signal between 1739 and 1767 nm and an idler between 2235 and 2328 nm. The normalized conversion efficiency is calculated to be 1.23 x 10(3) %W(-1)cm(-2) above laser threshold and 1: 25 x 10(4) %W(-1)cm(-2) below threshold. The demonstrated device is potential for the realization of integrated parametric devices such as electrically pumped entangled photon-pair sources and optical parametric oscillation, where quantum optical effects can unfold. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:5
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