Intra-dot Auger relaxation in quantum dots

被引：3

作者：

Ferreira, R ^{[1
]}

Bastard, G ^{[1
]}

机构：

[1] ENS, Phys Mat Condensee Lab, F-75005 Paris, France

来源：

COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II FASCICULE B-MECANIQUE PHYSIQUE ASTRONOMIE | 1999年 / 327卷 / 09期

关键词：

semiconductor; quantum dots; confinement; relaxation; Auger process;

D O I：

10.1016/S1287-4620(99)80153-7

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report on calculations of relaxation in InAs/GaAs self assembled dots. We point out that the intra-dot Auger relaxation is extremely fast in these structures. This suggests that energy relaxation in InAs/GaAs self organized quantum dots is dominated by capture effects. (C) Academie des sciences/Elsevier, Paris.

引用

页码：901 / 906

页数：6

共 7 条

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