Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High Tg for Hole Injection and Hole Transporting Materials

被引：8

作者：

Kim, Soo-Kang ^{[1
]}

Lee, Ji-Hoon ^{[2
]}

Park, Jong-Wook ^{[1
]}

机构：

[1] Catholic Univ Korea, Dept Chem, Puchon 420743, South Korea

[2] Chungju Natl Univ, Dept Polymer Sci & Engn, Chungju 380702, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 10期

关键词：

OLED; Hole-Transporting; Phenothiazine; Glass-Transition Temperature (T-g); Electroluminescence;

D O I：

10.1166/jnn.2008.1015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3 '',7 ''-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T-g in the range of 175-202 degrees C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm(2).

引用

页码：5247 / 5251

页数：5

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