Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysis

被引:5
|
作者
Kaouache, B. [1 ]
Labat, S.
Thomas, O.
Maitrejean, S. [2 ]
Carreau, V. [2 ]
机构
[1] Aix Marseille Univ, IM2NP, CNRS, Fac Sci & Tech,UMR 6242, F-13397 Marseille, France
[2] CEA LETI Minatec, F-38054 Grenoble, France
关键词
Interconnects; Damascene Cu; Narrow lines; X-ray diffraction; Strain; Stress; Texture;
D O I
10.1016/j.mee.2008.06.017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The behaviour of submicron damascene copper lines raises a number of fundamental issues such as grain growth in narrow trenches, thermomechanical properties of copper in these confined geometries, etc. This experimental study is aimed at evaluating the influence of annealing, polishing and line width on the room temperature strain and texture of narrow copper damascene lines. X-ray diffraction has been performed on arrays of lines with widths ranging between 3 mu m and 0.09 mu m. Two annealing conditions (150 degrees C and 400 degrees C) have been used either prior or after Chemical Mechanical Polishing (CMP). A clear influence of the Cu overburden on the in-line microstructure is evidenced. X-ray diffraction analysis shows that strains in line longitudinal direction are higher in those annealed at 400 degrees C and decrease with the width of the lines. Effect of CMP on structure and relationship between both texture and strain and temperature of thermal treatments is discussed in light of these observations. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2175 / 2178
页数:4
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