Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

被引：0
|
作者：
Fearton, SJ [1 ]
Vartuli, CB [1 ]
Lee, JW [1 ]
Donovan, SM [1 ]
MacKenzie, JD [1 ]
Abernathy, CR [1 ]
Shul, RJ [1 ]
McLane, GF [1 ]
Ren, F [1 ]
机构：
[1] UNIV FLORIDA,GAINESVILLE,FL 32611
来源：
COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS | 1996年 / 421卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
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页码：309 / 314
页数：6
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