Measurement Back-Action in Stacked Graphene Quantum Dots

被引：46

作者：

Bischoff, D. ^{[1
]}

Eich, M. ^{[1
]}

Zilberberg, O. ^{[2
]}

Roessler, C. ^{[1
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] ETH, Inst Theoret Phys, CH-8093 Zurich, Switzerland

来源：

NANO LETTERS | 2015年 / 15卷 / 09期

基金：

瑞士国家科学基金会;

关键词：

Graphene nanoribbon; van der Waals heterostructure; measurement back-action; charge detection; capacitively coupled double dot; COULOMB DRAG; BLOCKADE;

D O I：

10.1021/acs.nanolett.5b02167

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher-order quantum mechanical back-action mechanisms.

引用

页码：6003 / 6008

页数：6

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