Characterization and modeling of 4H-SiC power BJTs

被引：0

作者：

Gao, Y ^{[1
]}

Haung, AQ ^{[1
]}

Agarwal, AK ^{[1
]}

Krishnaswami, S ^{[1
]}

机构：

[1] N Carolina State Univ, SPEC, Raleigh, NC 27695 USA

来源：

IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3 | 2005年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC power BJTs are investigated by experimental measurements and numerical simulations. A number of phenomena that are different from Si BJT are investigated including the We offset voltage and collector conductivity modulation. The current gain as a function of collector current density has also been studies. Simulation shows the emitter and base junction interface states plays a key role in limiting the current gain at high current densities.

引用

页码：674 / 678

页数：5

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