Characterization and modeling of 4H-SiC power BJTs

被引：0
|
作者：
Gao, Y [1 ]
Haung, AQ [1 ]
Agarwal, AK [1 ]
Krishnaswami, S [1 ]
机构：
[1] N Carolina State Univ, SPEC, Raleigh, NC 27695 USA
来源：
IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3 | 2005年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4H-SiC power BJTs are investigated by experimental measurements and numerical simulations. A number of phenomena that are different from Si BJT are investigated including the We offset voltage and collector conductivity modulation. The current gain as a function of collector current density has also been studies. Simulation shows the emitter and base junction interface states plays a key role in limiting the current gain at high current densities.
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页码：674 / 678
页数：5
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