Radiation effects on astrometric CCDs at low operating temperatures

被引：27
作者：
Hopkinson, GR
Short, A
Vetel, C
Zayer, I
Holland, AD
机构：
[1] European Space Agcy, NL-2200 AG Noordwijk, Netherlands
[2] EADS Astrium SAS, F-31402 Toulouse 4, France
[3] Brunel Univ, Sch Engn & Design, Ctr Elect Imaging, Uxbridge UB8 3PH, Middx, England
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期
关键词：
charge-coupled device (CCD); charge transfer efficiency (CTE); displacement damage; Gaia; NIEL;
D O I：
10.1109/TNS.2005.860734
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Emission times of proton-induced traps and optical spot profiles have been measured at temperatures around -110 degrees C for large format charge-coupled devices (CCDs), representative of those to be used for the Gaia mission. There are at least seven trap species involved, with emission times in the range 0.3 mu s to 130 s and there is evidence for charge re-trapping by fast traps. Trap filling using a charge injection gate is discussed.
引用
收藏
页码：2664 / 2671
页数：8
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