Spin injection and spin dynamics at the CuPc/GaAs interface studied with ultraviolet photoemission spectroscopy and two-photon photoemission spectroscopy

被引:21
作者
Ding, Huanjun [1 ]
Gao, Yongli [1 ]
Cinchetti, Mirko [2 ,3 ]
Wuestenberg, Jan-Peter [2 ,3 ]
Sanchez-Albaneda, Marina [2 ,3 ]
Andreyev, Oleksiy [2 ,3 ]
Bauer, Michael [2 ,3 ]
Aeschlimann, Martin [2 ,3 ]
机构
[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[2] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany
[3] Univ Kaiserslautern, Res Ctr OPTIMAS, D-67663 Kaiserslautern, Germany
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 07期
关键词
D O I
10.1103/PhysRevB.78.075311
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interface formation between p-type GaAs(100) and the organic semiconductor copper phthalocyanine (CuPc) has been studied with ultraviolet photoemission spectroscopy and two-photon photoemission spectroscopy (2PPE). Spin-resolved 2PPE measurements show a highly efficient spin injection of hot electrons from GaAs into CuPc, demonstrating that spin-polarized electrons originating from the GaAs substrate can be injected into CuPc without any substantial spin-flip scattering at the interface. Furthermore, spin- and time-resolved 2PPE measurements are employed to study the temporal evolution of the spin polarization injected into the organic layer in the range up to 1 ps after injection from the GaAs substrate. The results show that the degree of spin polarization of electrons injected through the GaAs/CuPc interface into molecular orbitals just above the lowest unoccupied molecular orbital onset of CuPc is preserved longer than the spin polarization of electrons injected in energetically higher lying states.
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页数:6
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