Heteroepitaxial ZnO/6H-SiC structures fabricated by chemical vapor deposition

被引：23

作者：

Ataev, B. M. ^{[1
]}

Alivov, Ya. I. ^{[2
]}

Kalinina, E. V. ^{[3
]}

Mamedov, V. V. ^{[1
]}

Onushkin, G. A. ^{[3
]}

Makhmudov, S. Sh. ^{[1
]}

Omaev, A. K. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia

[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Chemical vapor deposition processes; Oxides; Zinc compounds; Semiconducting silicon compounds; Semiconducting II-VI materials; Light emitting devices;

D O I：

10.1016/j.jcrysgro.2004.11.379

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the first results of n-ZnO/p-SiC heterostructures fabrication by chemical vapor deposition in the low-pressure system. The structural and luminescence properties of these structures are studied. (C) 2004 Elsevier B. V. All rights reserved.

引用

页码：E2471 / E2474

页数：4

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