Effects of growth rate on structural property and adatom migration behaviors for growth of GaInNAs/GaAs (001) by molecular beam epitaxy

被引：1
|
作者：
Li, Jingling [1 ,2 ]
Gao, Peng [3 ]
Zhang, Shuguang [1 ,2 ]
Wen, Lei [1 ]
Gao, Fangliang [1 ,2 ]
Li, Guoqiang [1 ,2 ]
机构：
[1] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
[2] South China Univ Technol, Sch Mat Sci & Engn, Dept Elect Mat, Guangzhou 510641, Guangdong, Peoples R China
[3] Tianjin Inst Power Sources, Tianjin 300384, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 09期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
IMPROVED LUMINESCENCE EFFICIENCY; QUANTUM-WELLS; 1ST-PRINCIPLES CALCULATIONS; MICROSTRUCTURAL EVOLUTION; GAAS-SURFACES; SOLAR-CELLS; MBE GROWTH; GAINASN; TEMPERATURE; NITROGEN;
D O I：
10.1063/1.4990585
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the structural properties and the growth mode of GaInNAs films prepared at different growth rates (R-g) by molecular beam epitaxy. The crystalline structure is studied by high resolution X-ray diffraction, and the evolution of GaInNAs film surface morphologies is studied by atomic force microscopy. It is found that both the crystallinity and the surface roughness are improved by increasing Rg, and the change in the growth mode is attributed to the adatom migration behaviors particularly for In atoms, which is verified by elemental analysis. In addition, we have presented some theoretical calculation results related to the N adsorption energy to show the unique N migration behavior, which is instructive to interpret the growth mechanism of GaInNAs films. Published by AIP Publishing.
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页数：6
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