Self-organized Ge quantum wires on Si(111) substrates

被引：2

作者：

Jin, G ^{[1
]}

Tang, YS ^{[1
]}

Liu, JL ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.581828

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-organized Ge quantum wires have been grown on regular atomic steps formed along [(1) over bar 10] direction on Si(111) substrates by annealing at 870 degrees C in vacuum. The Samples have been studied by ex situ atomic force microscopy (AFM). Raman scattering and low temperature photoluminescence spectroscopy. The AFM results suggest that the mechanism of the formation of the wires be the evolution of self-organized lined-up quantum dots. Good quality Ge quantum wires have been formed and clear quantum confinement-induced quantization in the wires has been observed. (C) 1999 American Vacuum Society. [S0734-2101(99)00704-6].

引用

页码：1406 / 1409

页数：4

共 26 条

[1] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].

CERDEIRA, F ;

PINCZUK, A ;

BEAN, JC ;

BATLOGG, B ;

WILSON, BA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140

[2] Critical nuclei shapes in the stress-driven 2D-to-3D transition [J].

Chen, KM ;

Jesson, DE ;

Pennycook, SJ ;

Thundat, T ;

Warmack, RJ .

PHYSICAL REVIEW B, 1997, 56 (04) :R1700-R1703

[3] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[4] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[5] DEPENDENCE OF PSEUDOMORPHIC SEMICONDUCTOR BAND-GAP ON SUBSTRATE ORIENTATION [J].

HINCKLEY, JM ;

SINGH, J .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2694-2696

[6] Lithographic positioning of self-assembled Ge islands on Si(001) [J].

Kamins, TI ;

Williams, RS .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1201-1203

[7] STIMULATED-EMISSION IN SEMICONDUCTOR QUANTUM WIRE HETEROSTRUCTURES [J].

KAPON, E ;

HWANG, DM ;

BHAT, R .

PHYSICAL REVIEW LETTERS, 1989, 63 (04) :430-433

[8] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[9] Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth [J].

Ledentsov, NN ;

Shchukin, VA ;

Grundmann, M ;

Kirstaedter, N ;

Bohrer, J ;

Schmidt, O ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Zaitsev, SV ;

Gordeev, NY ;

Alferov, ZI ;

Borovkov, AI ;

Kosogov, AO ;

Ruvimov, SS ;

Werner, P ;

Gosele, U ;

Heydenreich, J .

PHYSICAL REVIEW B, 1996, 54 (12) :8743-8750

[10] CYCLIC GROWTH OF STRAIN-RELAXED ISLANDS [J].

LEGOUES, FK ;

REUTER, MC ;

TERSOFF, J ;

HAMMAR, M ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1994, 73 (02) :300-303

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