Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared

被引：38

作者：

Karimi, Mohammad ^{[1
,2
]}

Heurlin, Magnus ^{[1
,3
]}

Limpert, Steven ^{[1
]}

Jain, Vishal ^{[1
,2
]}

Zeng, Xulu ^{[1
]}

Geijselaers, Irene ^{[1
]}

Nowzari, Ali ^{[1
]}

Fu, Ying ^{[4
]}

Samuelson, Lars ^{[1
]}

Linke, Heiner ^{[1
]}

Borgstrom, Magnus T. ^{[1
]}

Pettersson, Hakan ^{[1
,2
]}

机构：

[1] Lund Univ, Solid State Phys & NanoLund, Box 118, SE-22100 Lund, Sweden

[2] Halmstad Univ, Dept Math Phys & Elect Engn, Box 823, SE-30118 Halmstad, Sweden

[3] Sol Volta AB, Scheelevagen 22, SE-22363 Lund, Sweden

[4] Royal Inst Technol KTH, Sci Life Lab, Dept Appl Phys, SE-17121 Solna, Sweden

来源：

NANO LETTERS | 2018年 / 18卷 / 01期

基金：

瑞典研究理事会;

关键词：

Nanowires; infrared photodetectors; quantum discs; intersubband photodetectors; photonic crystals; OPTICAL-PROPERTIES; SOLAR-CELLS; GAAS; PHOTOCURRENT; PARAMETERS; EFFICIENCY; LASERS; WELLS; GE;

D O I：

10.1021/acs.nanolett.7b04217

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Semiconductor nanowires have great potential for realizing broadband photodetectors monolithically integrated with silicon. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible, and near-infrared regions. Here, we report on the first intersubband nanowire heterostructure array photodetectors exhibiting a spectrally resolved photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3 to 20 mu m is enabled by intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The intriguing optical characteristics, including unexpected sensitivity to normal incident radiation, are explained by excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed and how engineered nanowire heterostructures open up new, fascinating opportunities for optoelectronics.

引用

页码：365 / 372

页数：8

共 38 条

[1] A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun [J].