Microwave transmission characteristics of ZnO nanowire

被引:1
作者
Cho, Joon Hyong [1 ]
Yoon, Hyong Seo [1 ]
Kim, Whan Kyun [1 ]
Lim, Juhwan [1 ]
Kang, Ji Yoong [1 ]
Oh, Juyeong [1 ]
Ha, Ryong [3 ]
Choi, Jung Han [2 ]
Choi, Heon-Jin [3 ]
Jun, Seong Chan [1 ]
机构
[1] Yonsei Univ, Sch Mech Engn, Seoul 120749, South Korea
[2] Fraunhofer Heinrich Hertz Inst, D-10587 Berlin, Germany
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
基金
新加坡国家研究基金会;
关键词
Compendex;
D O I
10.1049/el.2012.0970
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrical characteristics of single ZnO nanowire with various diameters at the high-frequency range are presented. Transmission characteristics were measured as S-parameter and RLC circuit simulation to deduce passive circuit elements. The result showed that the contact parameters were dominant as frequency increases. This study discovered the parasitic effects supposed to be minimised, contribute significantly to major signal transmission of ZnO nanowire and are crucial in developing such nano-electronic devices.
引用
收藏
页码:1073 / 1074
页数:2
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共 5 条
  • [1] High-performance ZnO nanowire field effect transistors
    Chang, Pai-Chun
    Fan, Zhiyong
    Chien, Chung-Jen
    Stichtenoth, Daniel
    Ronning, Carsten
    Lu, Jia Grace
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (13)
  • [2] Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness
    Choe, Minhyeok
    Jo, Gunho
    Maeng, Jongsun
    Hong, Woong-Ki
    Jo, Minseok
    Wang, Gunuk
    Park, Woojin
    Lee, Byoung Hun
    Hwang, Hyunsang
    Lee, Takhee
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)
  • [3] Passive electrical properties of multi-walled carbon nanotubes up to 0.1 THz
    Jun, Seong Chan
    Huang, X. M. H.
    Moon, Sungwon
    Kim, H. Jin
    Hone, James
    Jin, Y. W.
    Kim, J. M.
    [J]. NEW JOURNAL OF PHYSICS, 2007, 9
  • [4] Radio-frequency characteristics of graphene oxide
    Kim, Whan Kyun
    Jung, Young Mo
    Cho, Joon Hyong
    Kang, Ji Yoong
    Oh, Ju Yeong
    Kang, Hosung
    Lee, Hee-Jo
    Kim, Jae Hun
    Lee, Seok
    Shin, H. J.
    Choi, J. Y.
    Lee, S. Y.
    Kim, Y. C.
    Han, I. T.
    Kim, J. M.
    Yook, Jong-Gwan
    Baik, Seunghyun
    Jun, Seong Chan
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (19)
  • [5] Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
    Park, WI
    Kim, JS
    Yi, GC
    Bae, MH
    Lee, HJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 5052 - 5054