Preparation of GaN powder by mechanochemical reaction between Ga2O3 and Li3N

被引:16
作者
Kano, Junya [1 ]
Kobayashi, Eiko [1 ]
Tongamp, William [1 ]
Saito, Fumlo [1 ]
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
基金
日本学术振兴会;
关键词
gallium nitride; mechanochemical reaction; gallium oxides; lithium nitrides; milling; planetary ball mill;
D O I
10.1016/j.jallcom.2007.09.120
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A new route for synthesizing gallium nitride (GaN) from gallium oxide (Ga2O3) and lithium nitride (Li3N) by milling is proposed in this paper. The milling was performed in a planetary ball mill with uni-size ZrO2 balls to induce mechanochemical reaction between the starting materials in order to prepare GaN powder. The formation of GaN was confirmed in XRD patterns, and the peak intensity of GaN becomes clearer when milled under ammonia (NH3) gas environment. In the proposed route, GaN powder could be prepared within 2 h by milling Ga2O(3) and Li3N at a molar ratio of 1:2 and mill speeds around 300 rpm. (C) 2007 Published by Elsevier B.V.
引用
收藏
页码:337 / 339
页数:3
相关论文
共 12 条
[1]   Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia [J].
Ai, Yujie ;
Xue, Chengshan ;
Sun, Chuanwei ;
Sun, Lili ;
Zhuang, Huizhao ;
Wang, Fuxue ;
Li, Hong ;
Chen, Jinhua .
MATERIALS LETTERS, 2007, 61 (13) :2833-2836
[2]   New simple synthesis route of GaN powders from gallium oxyhydroxide [J].
Cho, S ;
Lee, J ;
Park, IY ;
Kim, ST .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (03) :275-278
[3]   Simple synthesis of GaN nanoparticles from gallium nitrate and ammonia aqueous solution under a flow of ammonia gas [J].
Iskandar, F ;
Ogi, T ;
Okuyama, K .
MATERIALS LETTERS, 2006, 60 (01) :73-76
[4]   Preparation and characterization of gallium (oxy)nitride powders -: Preliminary investigation as new gas sensor materials [J].
Kerlau, M ;
Merdrignac-Conanec, O ;
Reichel, P ;
Bârsan, N ;
Weimar, U .
SENSORS AND ACTUATORS B-CHEMICAL, 2006, 115 (01) :4-11
[5]   XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powder [J].
Kumar, MS ;
Kumar, J .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (02) :341-345
[6]  
Nakamura S., 2000, BLUE LASER DIODE
[7]   Fabrication and photoluminescence of highly crystalline GaN and GaN:Mg nanoparticles [J].
Ogi, T ;
Itoh, Y ;
Abdullah, M ;
Iskandar, F ;
Azuma, Y ;
Okuyama, K .
JOURNAL OF CRYSTAL GROWTH, 2005, 281 (2-4) :234-241
[8]   GaN: from fundamentals to applications [J].
Pankove, JI .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :305-309
[9]   Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film [J].
Park, YJ ;
Oh, CS ;
Yeom, TH ;
Yu, YM .
JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :1-6
[10]   The preparation and characterisation of gallium nitride using the Hi-Prexx facility [J].
Russell, D ;
Bayliss, SC ;
Sapelkin, AV ;
Clark, SM ;
Dent, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3) :120-122