GO and RGO Based FETs Fabricated With Langmuir-Blodgett Grown Monolayers

被引：1

作者：

Botcha, V. Divakar ^{[1
]}

Singh, Gulbagh ^{[1
]}

Narayanam, Pavan K. ^{[1
]}

Sutar, D. S. ^{[1
]}

Talwar, S. S. ^{[1
]}

Srinivasa, R. S. ^{[2
]}

Major, S. S. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

[2] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷

关键词：

Graphene oxide; Langmuir-Blodgett technique; FETs; conductivity; mobility; OXIDE;

D O I：

10.1063/1.4710012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene oxide (GO) monolayers were transferred onto SiO2/Si substrates by Langmuir-Blodgett (LB) technique and were converted to reduced graphene oxide (RGO) by exposure to hydrazine vapors followed by various durations of heat treatment at 400 degrees C in Ar atmosphere. Bottom gated FETs were fabricated with LB grown monolayers before and after reduction and were electrically characterized. The conductivity of RGO monolayers has been found to be in the range of 3 to 5 Scm(-1). The RGO devices showed p-type behavior with a hole mobility of 0.07cm(2)/Vs and I-on/I-off ratio of 2.

引用

页码：327 / +

页数：2

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