Plasma etching of Cr: A multiparameter uniformity study utilizing patterns of various Cr loads

被引：9

作者：

Constantine, C ^{[1
]}

Westerman, RJ ^{[1
]}

Plumhoff, J ^{[1
]}

机构：

[1] Plasma Therm Inc, St Petersburg, FL 33716 USA

来源：

PHOTOMASK AND X-RAY MASK TECHNOLOGY VI | 1999年 / 3748卷

关键词：

D O I：

10.1117/12.360203

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：153 / 157

页数：3

共 5 条

[1] Coleman T, 1995, P SOC PHOTO-OPT INS, V2621, P62, DOI 10.1117/12.228216
[2] Plasma etching of Cr films in the fabrication of photomasks .2. A comparison of etch technologies and a first look at defects
Coleman, T
Buck, P
[J]. 16TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1996, 2884 : 92 - 102
[3] Plasma etching of Cr photomasks: Parametric comparisons of plasma sources and process conditions
Constantine, C
Johnson, DJ
Westerman, RJ
Coleman, T
Faure, T
[J]. PHOTOMASK AND X-RAY MASK TECHNOLOGY IV, 1997, 3096 : 11 - 18
[4] LEVENSON MD, 1982, IEEE T ELEC DEV, V29
[5] RESNICK DJ, 1990, AT T INTERNAL MEMORA