Mg Doping Affects Dislocation Core Structures in GaN

被引：55

作者：

Rhode, S. K. ^{[1
]}

Horton, M. K. ^{[2
]}

Kappers, M. J. ^{[1
]}

Zhang, S. ^{[1
]}

Humphreys, C. J. ^{[1
]}

Dusane, R. O. ^{[3
]}

Sahonta, S. -L. ^{[1
]}

Moram, M. A. ^{[2
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 111卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

THREADING EDGE DISLOCATION; SCREW DISLOCATIONS; GROWTH;

D O I：

10.1103/PhysRevLett.111.025502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with both high and low dislocation densities, and in a comparable high dislocation density Mg-doped GaN film. All a-type dislocations in all samples have a 5/7-atom core structure. In contrast, most (a + c)-type dislocations in undoped GaN dissociate due to local strain variations from nearby dislocations. In contrast, Mg doping prevents (a + c)-type dislocation dissociation. Our data indicate that Mg affects dislocation cores in GaN significantly.

引用

页数：4

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