Microcrystalline silicon and 'micromorph' tandem solar cells

被引：116

作者：

Shah, A ^{[1
]}

Meier, J ^{[1
]}

Vallat-Sauvain, E ^{[1
]}

Droz, C ^{[1
]}

Kroll, U ^{[1
]}

Wyrsch, N ^{[1
]}

Guillet, J ^{[1
]}

Graf, U ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland

来源：

THIN SOLID FILMS | 2002年 / 403卷

关键词：

thin-film silicon; photovoltaic solar cells; c-Si : H layers; micromorph;

D O I：

10.1016/S0040-6090(01)01658-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The case for thin-film silicon as one of the main future options for cost-effective photovoltaic solar cells is outlined. The limitations of present amorphous silicon (a-Si:H) solar cells are briefly mentioned. Hydrogenated microcrystalline silicon (muc-Si:H) deposited by PECVD (plasma-enhanced chemical vapor deposition) at low substrate temperatures (approx. 200 degreesC) constitutes a new and additional possibility for solar cells. Properties of intrinsic muc-Si:H layers deposited by PECVD at VHF (very high frequency) excitation frequencies are listed, together with the necessary conditions for obtaining device-grade material. Performances obtained so far with muc-Si:H solar cells are given: the latter are compared with estimated limits for pn- and pin-type devices with E-g = 1.1 eV, Finally, present performances and future perspectives for 'micromorph' (muc-Si:H/a-Si:H) tandem solar cells are discussed. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：179 / 187

页数：9

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