Preparation and properties of YSZ-doped YBCO films grown by the TFA-MOD method

被引:9
作者
Liu, Min [1 ,2 ]
Suo, Hongli [1 ]
Ye, Shuai [1 ]
Shi, Dongqi [2 ]
Zhao, Yue [1 ]
Tang, Xiao [1 ]
Ma, Lin [1 ]
Li, Qi [2 ]
Wang, Lin [2 ]
Zhou, Meiling [1 ]
Dou, Shixue [2 ]
机构
[1] Beijing Univ Technol, Minist Educ, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China
[2] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
基金
澳大利亚研究理事会;
关键词
D O I
10.1088/0953-2048/21/11/115012
中图分类号
O59 [应用物理学];
学科分类号
摘要
YBa2Cu3O7-delta (YBCO) films with Zr doping have been prepared successfully by the trifluoroacetate metal-organic deposition (TFA-MOD) method through dissolving Zr acetylacetonate in the precursor solution. Yttria-stabilized zirconia (YSZ) nanoparticles were detected in the doped YBCO films by x-ray diffraction (XRD) and scanning electron microscopy (SEM). From the analysis of XRD omega and phi scans, the doped films have better out-of-plane and in-plane textures than those of the un-doped YBCO film. Although the doped YBCO films have a lower critical transition temperature (T-c) than that of un-doped YBCO film, a very significant enhancement of critical current density (J(c)) is displayed as compared to the un-doped film at high applied fields. A high J(c) near 10(6) A cm(-2) at 1 T and a J(c) of 10(5) A cm(-2) at 5 T were observed in 6% doped Zr film, which are 5 times and 25 times the J(c) values of the un-doped film in the same applied fields, respectively, indicating an optimal defect density created by 6% Zr doping.
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页数:5
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