Comparative Simulation of GaAs and GaN based Double Barriers-Resonant tunneling Diode

被引：5

作者：

Singh, Man Mohan ^{[1
]}

Siddiqui, M. J. ^{[1
]}

Saxena, Anupriya ^{[2
]}

机构：

[1] Aligarh Muslim Universirt, Aligarh 202002, Uttar Pradesh, India

[2] PIET Sitapura, Jaipur 303905, Rajasthan, India

来源：

INTERNATIONAL CONFERENCE ON COMPUTATIONAL MODELLING AND SECURITY (CMS 2016) | 2016年 / 85卷

关键词：

Quantum tunneling; RTD; Double Barriers; III-V group semiconductors; GaN based Quantum Structures;

D O I：

10.1016/j.procs.2016.05.224

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this work, we propose GaN based Double Barrier-Resonant Tunneling Diode (DBRTD) model and it is compare with GaAs based Quantum DBRTDs at room temperature. This comparison can be utilized to improve the performance of the RTD at higher frequencies. This paper also demonstrates the potential impact of doping concentration on current density of the device. Quantum tunneling mechanism results, based on non-equilibrium Green's function formalization within ballistic limits, shows high peak current with GaN RTD and achieves high peak to valley ratio as compared to GaAs RTD. Furthermore, comparison helps in analyzing the better device between both models. Simulation of the device has been performed with the use of Atlas Silvaco and Nextnano3 tool which confirms the various results presented in this research. (C) 2015 The Authors. Published by Elsevier B.V.

引用

页码：581 / 587

页数：7