Improved performance of InGaN/GaN blue light-emitting diodes with a SiO2/TiO2 Bragg reflector

被引：15

作者：

Chen, LC

Feng, HC

机构：

[1] Natl Taiwan Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

[2] Formosa Epitaxy Incorporat, Taoyuan, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 14期

关键词：

D O I：

10.1002/pssa.200520091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN/GaN blue light-emitting diodes (LEDs) on sapphire substrates with a SiO2/TiO2 Bragg reflector were fabricated. The deposited SiO2/TiO2 Bragg reflectors exhibit a high reflectivity of up to nearly 96.9% at about 460 nm. When the InGaN/GaN LEDs with a SiO2/TiO2 Bragg reflectors were operated at a forward current of 20 mA at room temperature, the peak wavelength, the light output power, and the external quantum efficiency were measured to be 470 nm, 5.91 mW, and 11.21%, respectively. The light output power was as high as 15.33 mW at the forward current of 100 mA.

引用

页码：2836 / 2839

页数：4

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