Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

被引：80

作者：

Kwak, JS ^{[1
]}

Lee, KY ^{[1
]}

Han, JY ^{[1
]}

Cho, J ^{[1
]}

Chae, S ^{[1
]}

Nam, OH ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Mat & Devices Lab, Suwon, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期

关键词：

D O I：

10.1063/1.1419053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of crystal polarity on the electrical properties of Ti/Al contacts to n-GaN substrate has been investigated. The Ti/Al contacts prepared on Ga-face n-GaN substrate became ohmic with a contact resistivity of 2x10(-5) Omega cm(2) after annealing at temperatures higher than 600 degreesC for 30 s. On the contrary, the contacts on N-face n-GaN substrate exhibited nonlinear current-voltage curve and high Schottky barrier heights over 1 eV were measured at the same annealing conditions. These results could be explained by opposite piezoelectric-field at GaN/AlN heterostructure resulted from different polarity of the GaN substrate. (C) 2001 American Institute of Physics.

引用

页码：3254 / 3256

页数：3

共 12 条

[1] ASBECK PM, 1997, ELECTRON LETT, V33, P1231
[2] Deep centers in a free-standing GaN layer
Fang, ZQ
Look, DC
Visconti, P
Wang, DF
Lu, CZ
Yun, F
Morkoç, H
Park, SS
Lee, KY
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (15) : 2178 - 2180
[3] The influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures
Gaska, R
Yang, JW
Bykhovski, AD
Shur, MS
Kaminski, VV
Soloviov, SM
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 64 - 66
[4] Characterization of free-standing hydride vapor phase epitaxy GaN
Jasinski, J
Swider, W
Liliental-Weber, Z
Visconti, P
Jones, KM
Reshchikov, MA
Yun, F
Morkoç, H
Park, SS
Lee, KY
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2297 - 2299
[5] Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
Karrer, U
Ambacher, O
Stutzmann, M
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (13) : 2012 - 2014
[6] Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability
Kwak, JS
Mohney, SE
Lin, JY
Kern, RS
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (07) : 756 - 760
[7] Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN
Luther, BP
Mohney, SE
Delucca, JM
Karlicek, RF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 196 - 199
[8] Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN
Luther, BP
DeLucca, JM
Mohney, SE
Karlicek, RF
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3859 - 3861
[9] THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE
MARLOW, GS
DAS, MB
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 91 - 94
[10] Wavelength dependence of InGaN laser diode characteristics
Nagahama, S
Yanamoto, T
Sano, M
Mukai, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (5A): : 3075 - 3081

← 1 2 →