Relation between oxygen precipitation and carrier recombination lifetime in Cz-Si crystal

被引：0

作者：

Lee, BY ^{[1
]}

Park, BM ^{[1
]}

Hwang, DH ^{[1
]}

Kwon, OJ ^{[1
]}

机构：

[1] LG Siltron Inc, Kumi 730350, Kyungsangbuk Do, South Korea

来源：

PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON | 1999年 / 99卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The relationship between Delta Oi and carrier recombination lifetime (CRT) is interpreted. A simple model for BMD formation is suggested and a relation between Delta Oi and CRT is be obtained from the relation between Delta Oi and BMD density. When Delta Oi is larger than about 1 ppma, r=K-3[BMD](0.087). This means that the size of BMD decreases very slightly along with the increase in its density. For Delta Oi smaller than about 1 ppma, it can be considered that both density and size of BMD are too small to affect the CRT. Effects of repeated heat treatments on the Delta Oi and on the CRT are also discussed.

引用

页码：80 / 87

页数：8

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