Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime

被引：0
|
作者：
Ahmed, Rekib Uddin [1 ]
Saha, Prabir [1 ]
机构：
[1] Natl Inst Technol Meghalaya, Dept Elect & Commun Engn, Shillong, Meghalayn, India
来源：
2017 3RD IEEE INTERNATIONAL SYMPOSIUM ON NANOELECTRONIC AND INFORMATION SYSTEMS (INIS) | 2017年
关键词：
Threshold voltage; potential distribution; subthreshold current; subthreshold slope; Atlas (Silvaco); DEVICES;
D O I：
10.1109/iNIS.2017.44
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper analytical threshold voltage and subthreshold current model for lightly-doped p-channel symmetric Double-Gate (DG) MOSFET in nanoscale regime have been presented. Analytical equation of potential distribution in the channel has been derived by solving the Poisson's equation with the constraint of weak inversion region. Threshold voltage equation of the device has been derived from the inversion charge sheet density at maximum potential position. Subthreshold current model of the device has been derived by augmenting the core drain current model with one of the short-channel effect ie. threshold voltage roll-off. Physical effect like surface roughness scattering has been incorporated in the subthreshold current model. The obtained results from threshold voltage model as a function of channel length and silicon body thickness and subthreshold current model have been found in good agreement with simulation results obtained from device simulator Atlas.
引用
收藏
页码：179 / 183
页数：5
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