Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe

被引：18

作者：

Inoue, K. ^{[1
]}

Yano, F. ^{[2
]}

Nishida, A. ^{[2
]}

Tsunomura, T. ^{[2
]}

Toyama, T. ^{[1
]}

Nagai, Y. ^{[1
]}

Hasegawa, M. ^{[3
,4
]}

机构：

[1] Tohoku Univ, Oarai Ctr, Inst Mat Res, Oarai, Ibaraki 3111313, Japan

[2] MIRAI Selete, Tsukuba, Ibaraki 3058569, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Ctr Cyclotron & Radioisotope, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

关键词：

D O I：

10.1063/1.2995864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dopant distribution in polycrystalline Si of n-type metal-oxide-semiconductor field effect transistor was measured by laser-assisted three dimensional atom probe. Segregation of As and P atoms to grain boundaries and at the interface between gate and gate oxide, resulting from different mechanisms, i.e., volume diffusion in the bulk and grain boundary diffusion at the interface, was clearly observed. Concentration profiles that show such clear segregation were directly obtained by atomic-resolution measurement. (C) 2008 American Institute of Physics.

引用

页数：3

共 9 条

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