Schmitt Triggers With Adjustable Hysteresis Window Based on Indium-Tungsten-Oxide Electric-Double-Layer TFTs

被引：11

作者：

Gao, Ya ^{[1
]}

Wang, Xiangyu ^{[1
]}

Luo, Jie ^{[1
]}

Liu, Zehua ^{[1
]}

Wan, Qing ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 07期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

Electric-double-layer; neuromorphic devices; Schmitt trigger; thin-film transistors; THIN-FILM TRANSISTORS; LOW-VOLTAGE;

D O I：

10.1109/LED.2019.2919302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interfacial ionelectron coupling and electro-chemical doping are of great importance for the electro-chemical sensors and the neuromorphic system. Schmitt triggers with adjustable hysteresis can be used as a basic unit for the neuromorphic system. In this letter, we demonstrated a simple low-voltage Schmitt trigger with one indium-tungsten-oxide homojunction electric-double-layer thin-film transistor. Adjustablehysteresis is observeddue to the dynamic modulation of mobile proton in the electrolyte gate dielectric. The ionelectron hybrid Schmitt triggers with adjustable hysteresis window are very interesting for electrochemical sensors and neuromorphic computation.

引用

页码：1205 / 1208

页数：4

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