A 750V Recessed-Emitter-Trench IGBT with Recessed-Dummy-Trench Structure Featuring Low Switching Losses

被引：0

作者：

Yao, Yao ^{[1
,2
]}

Luo, Haihui ^{[1
,2
]}

Xiao, Qiang ^{[1
,2
]}

Zhu, Chunlin ^{[3
]}

Xiao, Haibo ^{[1
,2
]}

Qin, Rongzhen ^{[1
,2
]}

Ngwendson, Luther-King ^{[3
]}

Ning, Xubin ^{[1
,2
]}

Tan, Canjian ^{[1
,2
]}

Deviny, Ian ^{[3
]}

Dai, Xiaoping ^{[1
,2
,3
]}

机构：

[1] State key Lab Adv Power Semicond Devices, Zhuzhou, Peoples R China

[2] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou, Peoples R China

[3] Dynex Semicond Ltd, Res & Dev Ctr, Lincoln, England

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

IGBT; Recessed-Emitter-Trench; RET; Recessed-Dummy-Trench; RDT; low switching losses; high turn-on dI/dt controllability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel 750V Recessed-Emitter-Trench IGBT (RET-IGBT) featuring Recessed-Dummy-Trench (RDT) structure is proposed. The mesa width is shrunk to 1.2 mu m with the advantage of RET, which improves the trade-off relationship between on-state voltage drop (V-CE(ON)) and turn-off energy loss (E-OFF) without any performance sacrifice. Furthermore, by applying proper dummy trench and dummy Pwell ground scheme through RDT concept, 34.1% lower Miller capacitance, 34.9% lower turn-on loss and 12.3% lower turn-off loss are achieved with better turn-on dI/dt and reverse recovery dV/dt controllability, which are favourable for high frequency operations.

引用

页码：112 / 115

页数：4

共 5 条

[1]

Deviny Ian, 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P147, DOI 10.23919/ISPSD.2017.7988932

[2]

Jaeger Christian, 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P69, DOI 10.23919/ISPSD.2017.7988895

[3]

Konishi K, 2016, INT SYM POW SEMICOND, P363, DOI 10.1109/ISPSD.2016.7520853

[4]

Ohi K, 2015, PROC INT SYMP POWER, P25, DOI 10.1109/ISPSD.2015.7123380

[5]

Sawada M., 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P65, DOI 10.23919/ISPSD.2017.7988894

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