Instrument response of reflection high energy electron diffraction pole figure

被引:13
作者
Chen, L. [1 ]
Dash, J. [1 ]
Su, P. [2 ]
Lin, C. F. [1 ]
Bhat, I. [2 ]
Lu, T. -M. [1 ]
Wang, G. -C. [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
基金
美国国家科学基金会;
关键词
Reflection high energy electron diffraction; RHEED pole figure; Instrument response of transmitted electrons; Epitaxial CdTe film; Textured CdTe film; GROWTH; RHEED;
D O I
10.1016/j.apsusc.2013.10.055
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Reflection high-energy electron diffraction (RHEED) pole figure technique using the transmission mode has been developed to study the texture evolution of thin films. For quantitative evaluation of thin film texture, including the dispersion of texture, one would require the knowledge of the instrument response function. We report the characterization of instrument response in RHEED pole figure from an epitaxial CdTe(1 0 0) film grown on GaAs(1 0 0) substrate. We found the finite mean free path of electrons in a film contributes to the broadening of the poles. In addition, the image processing step size used in the construction of a pole figure also affects the broadening of constructed poles. We apply the measured instrument response in RHEED pole figure to quantitatively analyze a biaxially textured CdTe(1 1 1) film deposited on a biaxially textured Ge(1 1 1) substrate. Through the deconvolution of the measured dispersions from the poles in the textured CdTe(1 1 1) film by the instrument response function, we obtain the out-of-plane and in-plane dispersions of the biaxially textured CdTe(1 1 1) film. This method is generic and the instrument response should be considered in order to obtain quantitative texture information for other epitaxial and textured nanostructured films through RHEED pole figure measurements. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:458 / 465
页数:8
相关论文
共 22 条
[1]  
BAUER E, 1963, SINGL CRYST FILMS IN, P43
[2]   REFRACTION EFFECTS IN ELECTRON DIFFRACTION [J].
COWLEY, JM ;
REES, ALG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1947, 59 (332) :287-&
[3]  
Cullity B. D., 1978, ELEMENTS XRAY DIFFRA
[4]   Real-time observation of initial stages of copper film growth on silicon oxide using reflection high-energy electron diffraction [J].
Drotar, JT ;
Lu, TM ;
Wang, GC .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) :7071-7079
[5]   Small angle grain boundary Ge films on biaxial CaF2/glass substrate [J].
Gaire, C. ;
Clemmer, P. C. ;
Li, H. -F. ;
Parker, T. C. ;
Snow, P. ;
Bhat, I. ;
Lee, S. ;
Wang, G. -C. ;
Lu, T. -M. .
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (04) :607-610
[6]   STUDIES OF CDTE SURFACES WITH SECONDARY ION MASS-SPECTROMETRY, RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY [J].
HAGEALI, M ;
STUCK, R ;
SAXENA, AN ;
SIFFERT, P .
APPLIED PHYSICS, 1979, 19 (01) :25-33
[7]  
He B.B, 2009, Two-Dimensional X-Ray Diffraction
[8]   Image plate X-ray diffraction and X-ray reflectivity characterization of protective coatings and thin films [J].
Lee, SL ;
Windover, D ;
Doxbeck, M ;
Nielsen, M ;
Kumar, A ;
Lu, TM .
THIN SOLID FILMS, 2000, 377 :447-454
[9]   In situ thin-film texture determination [J].
Litvinov, D ;
O'Donnell, T ;
Clarke, R .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2151-2156
[10]  
MULLER B, 1995, REV SCI INSTRUM, V66, P5232, DOI 10.1063/1.1146090